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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1457 2SD1457A DESCRIPTION With TO-3PFa package High DC current gain DARLINGTON High VCBO APPLICATIONS For power amplification PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PFa) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO PARAMETER Collector-base voltage VCEO INC Collector-emitter voltage E SEM ANG H 2SD1457 2SD1457A Open emitter OND IC CONDITIONS TOR UC MAX 200 150 200 5 6 10 UNIT V Open base V VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Open collector V A A TC=25ae PC Collector power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature 60 W 3.0 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2SD1457 VCEO(SUS) Collector-emitter sustaining voltage 2SD1457A V(BR)EBO VCEsat VBEsat ICBO hFE fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain Transition frequency IE=0.1A ;IC=0 IC=3A ;IB=60mA IC=3A ;IB=60mA VCB=200V; IE=0 IC=2A ; VCE=2V IC=0.5A ; VCE=10V;f=1MHz IC=2A ;L=10mH CONDITIONS 2SD1457 2SD1457A SYMBOL MIN 150 TYP. MAX UNIT V 200 5 1.5 2.5 100 700 15 10000 |I V V V A hFE Classifications Q P IN O 700-2500 2000-5000 ANG CH 4000-10000 MIC E SE DUC ON TOR MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1457 2SD1457A CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.30mm) 3 |
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